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2SK2959
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1059-0500 (Previous: ADE-208-569C) Rev.5.00 Sep 07, 2005
Features
* Low on-resistance RDS(on) = 7 m typ. * 4 V gate drive devices. * High speed switching
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
D G 1. Gate 2. Drain (Flange) 3. Source S
1
2
3
Rev.5.00 Sep 07, 2005 page 1 of 6
2SK2959
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Tch Tstg Ratings 30 20 50 200 50 75 150 -55 to +150 Unit V V A A A W
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 30 20 -- -- 1.0 -- -- 25 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 7.0 12 45 2000 1500 350 20 330 190 190 0.95 60 Max -- -- 10 10 2.0 10 18 -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF ns ns ns ns V ns Test Conditions ID = 10m A, VGS = 0 IG = 100 A, VDS = 0 VDS = 30 V, VGS = 0 VGS = 16 V, VDS = 0 ID = 1 mA, VDS = 10 V ID = 25 A, VGS = 10 V Note3 ID = 25 A, VGS = 4 V Note3 ID = 25 A, VDS = 10 V Note3 VDS = 10 V, VGS = 0, f = 1 MHz VGS = 10 V, ID = 25 A, RL = 0.4
IF = 50A, VGS = 0 IF = 50A, VGS = 0 diF/ dt = 50 A/ s
Rev.5.00 Sep 07, 2005 page 2 of 6
2SK2959
Main Characteristics
Power vs. Temperature Derating
100 1000 300 10 s
PW
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
75
100 30 10 3 1 0.3
10
= 10
1
ms
50
25
(1 Op sh ot) (T erat c = io Operation in n 25 this area is C ) limited by RDS(on)
DC
m
0
s
s
0
50
100
150
200
0.1 Ta = 25C 0.1 0.3 1
3
10
30
100
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
50 10 V 5 V 4V 3.5 V Pulse Test 50
Typical Transfer Characteristics
Drain Current ID (A)
3V 30
Drain Current ID (A)
40
40
VDS = 10 V Pulse Test
30 25C 75C 10 Tc = -25C
20 2.5 V 10
VGS = 2 V
20
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS (on) (V)
0.5 Pulse Test
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
500 Pulse Test 500 100 50 20
VGS = 4 V
0.4
0.3
0.2 ID = 20 A 0.1 10 A 5A 4 8 12 16 20
Static Drain to Source on State Resistance RDS (on) (m)
10 5 1 2 5 10
10 V 20 50 100 200
0
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.5.00 Sep 07, 2005 page 3 of 6
2SK2959
Static Drain to Source on State Resistance vs. Temperature
20 Pulse Test 16
VGS = 4 V
Static Drain to Source on State Resistance RDS (on) (m)
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance yfs (S)
50 20 10 5 75C 2 1 0.5 0.1 0.2 0.5
VDS = 10 V Pulse Test
I D = 5, 10, 20 A
Tc = -25C 25C
12
8 10 V
5 ,10, 20 A
4 0 -40
0
40
80
120
160
1
2
5 10 20
50
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
100 10000 3000
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
50
Capacitance C (pF)
Ciss Coss
20 10 5 2 1 0.1 di / dt = 50 A / s VGS = 0, Ta = 25C 0.3 1 3 10 30 100
1000 300 100 300 10 0 10 20 30 40 50 Crss
VGS = 0 f = 1 MHz
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
50 ID = 50 A 40
VGS
Switching Characteristics
20 1000
VGS = 10 V, VDD = 10 V PW = 5 s, duty < 1 % td(off)
16
Switching Time t (ns)
500 200
tf
30
VDS
VDD = 5 V 10 V 25 V
12
100
tr
20
8
50 20 10 0.1 0.2
td(on)
10
VDD = 25 V 10 V 5V
4 0 100
0
20
40
60
80
0.5
1
2
5
10 20
50
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.5.00 Sep 07, 2005 page 4 of 6
2SK2959
Reverse Drain Current vs. Source to Drain Voltage
Reverse Drain Current IDR
(A)
50
40
10 V 5V
VGS = 0, -5 V
30
20
10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage
VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 1.67C/W, Tc = 25C
PDM PW T
0.03
0.02 1 lse 0.0 t pu o h 1s
D=
PW T
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width Switching Time Test Circuit Vin Monitor D.U.T.
RL
PW (S) Waveform
Vout Monitor Vin Vout 10% 10% 90% td(on) tr 90% td(off)
90%
10%
Vin 10 V
50
VDD
= 10 V
tf
Rev.5.00 Sep 07, 2005 page 5 of 6
2SK2959
Package Dimensions
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AC-A
Package Name TO-220AB / TO-220ABV
MASS[Typ.] 1.8g
Unit: mm
11.5 Max
2.79 0.2
10.16 0.2 9.5 8.0 3.6
+0.2 -0.1
+0.1 -0.08
4.44 0.2 1.26 0.15
6.4
18.5 0.5
15.0 0.3
1.27
2.7 Max
7.8 0.5
0.76 0.1
14.0 0.5
1.5 Max
2.54 0.5
2.54 0.5
0.5 0.1
Ordering Information
Part Name 2SK2959-E Quantity 500 pcs Box (Sack) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.5.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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